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ONSEMI - FGB40T65SPD-F085 - IGBT, N-Ch, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pins
- DC Collector Current: 80A
- Collector Emitter Saturation Voltage Vce(on): 2V
- Power Dissipation Pd: 267W
- Collector Emitter Voltage V(br)ceo: 650V
- Transistor Case Style: TO-263AB
- No. of Pins: 3Pins
- Operating Temperature Max: 175°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
