Omschrijving
IXYS SEMICONDUCTOR - IXFN360N10T - MOSFET Transistor, GigaMOS™, N Channel, 360 A, 100 V, 0.0026 ohm, 100 V, 4.5 V, SOT-227B
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 360A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.0026ohm
- Rds(on) Test Voltage Vgs: 100V
- Threshold Voltage Vgs: 4.5V
- Power Dissipation Pd: 830W
- Operating Temperature Max: 175°C
- Product Range: Trench HiperFET Series
- SVHC: No SVHC (07-Jul-2017)