Omschrijving
VISHAY - SQJB68EP-T1_GE3 - Dual MOSFET, N Channel, 100 V, 11 A, 0.0765 ohm, PowerPAK SO, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 11A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.0765ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2V
- Power Dissipation Pd: 27W
- Transistor Case Style: PowerPAK SO
- No. of Pins: 8Pins
- Operating Temperature Max: 175°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
